2N2222A

Manufacturer No

2N2222A

Description

Bipolar (BJT) Transistor NPN – Through Hole TO-18

Manufacturer

ON Semiconductor

Datasheet

Category: Tag:

Description

Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Mounting Type Through Hole
Current – Collector (Ic) (Max) 800 mA
Voltage – Collector Emitter Breakdown (Max) 40 V
Power – Max 500 mW
In Stock 1000