Description
| Diode Element Material | SILICON |
| Operating Temperature-Max | 175 °C |
| Output Current-Max | 0.2 A |
| JESD-30 Code | O-XALF-W2 |
| Rep Pk Reverse Voltage-Max | 100 V |
| Reverse Recovery Time-Max | 0.004 µs |
| Power Dissipation-Max | 0.5 W |
| In Stock |
20 |
Manufacturer No |
1N914 |
Description |
Diodes – General Purpose, Power, Switching 100V 4.0ns Diode Single Junction |
Manufacturer |
NTE ELECTRONICS INC |
| Diode Element Material | SILICON |
| Operating Temperature-Max | 175 °C |
| Output Current-Max | 0.2 A |
| JESD-30 Code | O-XALF-W2 |
| Rep Pk Reverse Voltage-Max | 100 V |
| Reverse Recovery Time-Max | 0.004 µs |
| Power Dissipation-Max | 0.5 W |
| In Stock |
20 |