Description
Diode Element Material | SILICON |
Operating Temperature-Max | 175 °C |
Output Current-Max | 0.2 A |
JESD-30 Code | O-XALF-W2 |
Rep Pk Reverse Voltage-Max | 100 V |
Reverse Recovery Time-Max | 0.004 µs |
Power Dissipation-Max | 0.5 W |
In Stock |
20 |
Manufacturer No |
1N914 |
Description |
Diodes – General Purpose, Power, Switching 100V 4.0ns Diode Single Junction |
Manufacturer |
NTE ELECTRONICS INC |
Diode Element Material | SILICON |
Operating Temperature-Max | 175 °C |
Output Current-Max | 0.2 A |
JESD-30 Code | O-XALF-W2 |
Rep Pk Reverse Voltage-Max | 100 V |
Reverse Recovery Time-Max | 0.004 µs |
Power Dissipation-Max | 0.5 W |
In Stock |
20 |